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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. march 2014 docid023753 rev 3 1/15 STGW40H120DF2 trench gate field-stop igbt, h series 1200 v, 40 a high speed datasheet - preliminary data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 2.1 v (typ.) @ i c = 40 a ? 5 s minimum short circuit withstand time at t j =150 c ? safe paralleling ? very fast recovery antiparallel diode ? low thermal resistance ? lead free package applications ? uninterruptible power supply ? welding machines ? photovoltaic inverters ? power factor correction ? high frequency converters description this device is an igbt developed using an advanced proprietary trench gate field-stop structure. the device is part of the h series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. moreover, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 table 1. device summary order code marking package packaging STGW40H120DF2 gw40h120df2 to-247 tube www.st.com
contents STGW40H120DF2 2/15 docid023753 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid023753 rev 3 3/15 STGW40H120DF2 electrical ratings 15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c continuous collector current at t c = 25 c 80 a continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 160 a v ge gate-emitter voltage 20 v i f continuous collector current at t c = 25 c 80 a continuous collector current at t c = 100 c 40 a i fp (1) pulsed forward current 160 a p tot total dissipation at t c = 25 c 468 w t j operating junction temperature ? 55 to 175 c t stg storage temperature range ? 55 to 150 table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.32 c/w r thjc thermal resistance junction-case diode 1.3 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW40H120DF2 4/15 docid023753 rev 3 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 2.1 2.6 v v ge = 15 v, i c = 40 a t j = 125 c 2.4 v ge = 15 v, i c = 40 a t j = 175 c 2.5 v f forward on-voltage i f = 40 a 3.9 4.9 v i f = 40 a, t j = 125 c 3.05 i f = 40 a, t j = 175 c 2.8 v ge(th) gate threshold voltage v ce = v ge , i c = 2 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1200 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -3200- pf c oes output capacitance - 202 - pf c res reverse transfer capacitance -88-pf q g total gate charge v cc = 960 v, i c = 40 a, v ge = 15 v, see figure 29 -187-nc q ge gate-emitter charge - 17 - nc q gc gate-collector charge - 115 - nc
docid023753 rev 3 5/15 STGW40H120DF2 electrical characteristics 15 table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 600 v, i c = 40 a, r g = 10 , v ge = 15 v, see figure 30 -18-ns t r current rise time - 37 - ns (di/dt) on turn-on current slope - 1755 - a/s t d(off) turn-off delay time - 152 - ns t f current fall time - 83 - ns e on (1) 1. energy losses include reverse recovery of the external diode. the diode is the same of the co-packed STGW40H120DF2 turn-on switching losses - 1 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 1.32 - mj e ts total switching losses - 2.32 - mj t d(on) turn-on delay time v ce = 600 v, i c = 40 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 30 -36-ns t r current rise time - 20 - ns (di/dt) on turn-on current slope - 1580 - a/s t d(off) turn-off delay time - 161 - ns t f current fall time - 190 - ns e on (1) turn-on switching losses - 1.81 - mj e off (2) turn-off switching losses - 2.46 - mj e ts total switching losses - 4.27 - mj t sc short-circuit withstand time v ce = 600 v, v ge = 15 v, t j = 150 c, 5-j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 40 a, v r = 600 v, di/dt=500 a/s , v ge = 15 v, see figure 30 -488-ns q rr reverse recovery charge - 2.59 - c i rrm reverse recovery current - 11.6 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -406-a/s e rr reverse recovery energy - 0.38 - mj t rr reverse recovery time i f = 40 a, v r = 600 v, di/dt=500 a/s , v ge = 15 v, t j = 175 c, see figure 30 -484-ns q rr reverse recovery charge - 4.5 - c i rrm reverse recovery current - 18.6 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -170-a/s e rr reverse recovery energy - 0.94 - mj
electrical characteristics STGW40H120DF2 6/15 docid023753 rev 3 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature 3 wrw 7 & ?& : 9 *( ?97 - ?& ? *,3*)65 , & 7 & ?& $ 9 *( ?97 - ??& *,3*)65 figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) , & 9 &( 9 $ 9 *( 9 9 9 9 9 *,3*)65 , & 9 &( 9 $ 9 *( 9 9 9 9 9 *,3*)65 figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current 9 &(vdw 7 - ?& 9 9 *( 9 , & $ , & $ , & $ *,3*)65 9 &(vdw , & $ 9 9 *( 9 7 - ?& 7 - ?& 7 - ?& *,3*)65
docid023753 rev 3 7/15 STGW40H120DF2 electrical characteristics 15 figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area ,f>$@ i>n+]@ * ? uhfwdqjxodufxuuhqwvkdsh gxw\f\foh 9 && 95 9 *( 97 - ?& 7f ? & 7f ? & *,3*)65 , & 9 &( 9 $ ?v ?v pv 6lqjohsxovh 7f ?&7 - ?& 9 *( 9 ?v *,3*)65 figure 10. transfer characteristics figure 11. diode v f vs. forward current 7 - ?& 7 - ?& 9 *( 9 , & $ 9 &( 9 *,3*)65 9 ) , ) $ 9 7 - ?& 7 - ?& 7 - ?& *,3*)65 figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature 9 *(wk 7 - ?& qrup , & p$ 9 &( 9 *( *,3*)65 9 %5&(6 7 - ?& qrup , & p$ *,3*)65
electrical characteristics STGW40H120DF2 8/15 docid023753 rev 3 figure 14. capacitance variation figure 15. gate charge vs. gate-emitter voltage & 9 &( 9 s) & lhv & rhv & uhv *,3*)65 9 *( 4 j q& 9 , & $ , *( p$ 9 && 9 *,3*)65 figure 16. switching loss vs collector current figure 17. switching loss vs gate resistance ( , & $ ?- ( 21 9 && 99 *( 9 5 * 7 - ?& ( 2)) *,3*)65 ( 5 * ?- ( 2)) 9 && 99 *( 9 , & $7 - ?& ( 21 *,3*)65 figure 18. switching loss vs temperature figure 19. switching loss vs collector-emitter voltage ( 7 - ?& ?- ( 2)) 9 && 99 *( 9 5 * , & $ ( 21 *,3*)65 ( 9 &( 9 ?- ( 2)) 7 - ?&9 *( 9 5 * , & $ ( 21 *,3*)65
docid023753 rev 3 9/15 STGW40H120DF2 electrical characteristics 15 figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance w , & $ qv w i 7 - ?&9 *( 9 5 * 9 && 9 w grii w grq w u *,3*)65 w 5 * qv w i 7 - ?&9 *( 9 , & $9 && 9 w grii w u w grq *,3*)65 figure 22. reverse recovery current vs. diode current slope figure 23. reverse recovery time vs. diode current slope , up glgw$?v $ , ) $9 && 9 9 *( 9 ?& 7 - *,3*)65 w uu glgw$?v qv , ) $9 && 9 9 *( 9 ?& 7 - *,3*)65 figure 24. reverse recovery charge vs. diode current slope figure 25. reverse recovery energy vs. diode current slope 4 uu glgw$?v q& , ) $9 && 9 9 *( 9 ?& 7 - *,3*)65 ( uu glgw$?v ?- , ) $9 && 9 9 *( 9 ?& 7 - *,3*)65
electrical characteristics STGW40H120DF2 10/15 docid023753 rev 3 figure 26. thermal impedance for igbt figure 27. thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid023753 rev 3 11/15 STGW40H120DF2 test circuits 15 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW40H120DF2 12/15 docid023753 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack? is an st trademark. figure 32. to-247 drawing 0075325_f
docid023753 rev 3 13/15 STGW40H120DF2 package mechanical data 15 table 8. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
revision history STGW40H120DF2 14/15 docid023753 rev 3 5 revision history table 9. document revision history date revision changes 03-oct-2012 1 initial release. 29-jan-2014 2 updated features in cover page. updated table 4: static characteristics , table 5: dynamic characteristics and table 7: diode switching characteristics (inductive load) . minor text changes. 24-mar-2014 3 updated title and description in cover page. updated table 4: static characteristics , table 5: dynamic characteristics and table 7: diode switching characteristics (inductive load) . added section 2.1: electrical characteristics (curves) .
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